50 mhz mosfet datasheet com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. Data from 87. 8-500 MHz, 1500 W CW, 50 V. 56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0. Measured in 13. 5 dB RS =RL =75Ω - - 3. Legal information 12. w7zoi The Circuit The dual gate MOSFET was an especially popular device for commercial applications in the late 1970 and early 1980 period. 8 to 400 MHz. Typical CW Performance at 220 MHz: VDD =50Vdc,IDQ =30mA, Pout =10W Power Gain — 23. 4. 80 CW, class-AB 225 50 250 >14 typ. Data from 81. It is designed for high-voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 128 MHz. The high gain and broadband performance of this Coax1, Coax2 2. A 300W MOSFET Linear Amplifier for 50 MHz Richard Frey, Sr. C, 02-Aug-2021 2 Document Number: 91021 For technical questions, contact: hvm@vishay. Skip to Main Content (800) 346-6873. Typical Performance MRFX1K80HR5 R5 Suffix = 50 Units, 56 Our Radio-Frequency (RF) power MOSFETs support frequencies ranging from 2 MHz to 150 MHz, supply voltages from 50V to 300V and output power from 50W to 3 kW. In the past, RF power MOSFETs were limited to applications of 50V or less. (MHz) VDS (V) PL (W) Gp (dB) ηD (%) CW, class-B 108 50 300 >20 >60 CW, class-C 108 50 300 typ. Max. IRF520 www. 8 cm 5. Measured in 40. MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13. Typ. The product is entirely safe provided that the BeO discs are not damaged. 5 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS MOSFET symbol showing the integral reverse p - n junction diode 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. MRF150 . Mouser offers inventory, pricing, & datasheets for RF Transistors. , Bend, Oregon USA Original RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. 5. Pin connection hD VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz 50 58 - % Load mismatch frequencies up to 450 MHz. 1. ) Maximum Torque for Device Mounting Screws and Electrical Terminations. 5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. 20″ 50 Ω, 0. These characteristics make the SD2942 ideal for 50 V DC very high power applications up to 250 MHz. RF Transistors are available at Mouser Electronics. V1 MRF151 2 M/A-COM Technology Solutions Inc. We have combined our high-voltage MOSFET technology with RF-specific die geometries to overcome this design Designed for 2 MHz–100 MHz operation 800 W with 17 dB minimum gain at 30 MHz, 50 V Excellent stability and low IMD Common source configuration Available in matched pairs 70:1 load VSWR capability at specified operating conditions Nitride passivated Economical flangeless package Refractory gold metallization High-voltage replacement for MRF154 Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T MRF150 MOSFET datasheet. Designed primarily for linear large–signal output stages up to 150 MHz frequency range. 5 - nH Internal source inductance LS-7. Mouser offers inventory, pricing, & datasheets for RF MOSFET Transistors. 16 >50 typ. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2. 086″ OD Semi–Rigid Coax 6 RF Device Data NXP Semiconductors MRF101AN MRF101BN 13. 56 MHz Enhancement--Mode Lateral MOSFET input and output design supports frequency use from 1. Features • Specified 500 V, 128 MHz characteristics: f = 50 MHz to 860 MHz RS =RL =50Ω - - 2. 1 Data sheet status [1] Please consult Datasheet: Description: Motorola, Inc: MRF151: 184Kb / 8P: N-CHANNEL BROADBAND RF POWER MOSFET MRF154: 161Kb / 8P: N-CHANNEL BROADBAND RF POWER MOSFET Tyco Electronics: MRF141G: 220Kb / 9P: N-CHANNEL BROADBAND RF POWER MOSFET MRF173CQ: 119Kb / 6P: N-CHANNEL BROADBAND RF POWER MOSFET MRF177: 214Kb / 9P: N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line cies from 800 MHz to 1. 7 2. Latest update 29Nov2015. Measured in 144 MHz reference circuit (page 30). The SD2942 offers 25% lower RDS(ON) than industry standard and 20% higher power saturation than ST SD2932. 00 Efficiency(%) 45 Type TMOS Package Flange Ceramic Pkg Package Category Ceramic Flange Mount IRF510 www. 0 Pout(W) 600. 8 MHz to 50 MHz RF MOSFET Transistors. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Measured in 230 MHz fixture The SD2942 is a gold metallized N-channel MOS field-effect RF power transistor. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) • Superior High Order IMD 500 V, 900 W, 128 MHz RF Power MOSFET Product Overview The ARF475FL is a matched pair of RF power transistors in a common source configuration in a T3A package. RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Rev. D, 02-Aug-2021 2 Document Number: 91015 For technical questions, contact: hvm@vishay. 7 Ω Internal drain inductance LD Between lead, 6 mm (0. 0 GHz. Its unmatched input and output design allows for wide frequency range use from 1. The values shown are the center band performance numbers across the indicated frequency range. 5 dB N-channel single gate MOSFET 12. RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min. 5–108 MHz broadband reference circuit (page 5). IRF540 www. 18 typ. 25") from package and center of die contact -4. 0 (1. 36 MHz reference circuit (page 25). 9 dB Drain Efficiency — 62% Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power Features A 300W MOSFET Linear Amplifier for 50 MHz Reprinted from the May/June 1999 Issue of QEX Magazine Courtesy of ARRL, Inc. Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET. Discrete components still dominated, especially when dealing with RF. D) PDF | HTML 07 Feb 2019 Mouser offers inventory, pricing, & datasheets for 1. A SMT Dual Gate MOSFET Preamplifier for 50 MHz. Contact Mouser 1. Applications Engineer, Advanced Power Technology, Inc. 7 - 3. Broadband RF Power MOSFET 600W, to 80MHz, 50V Min Frequency(MHz) 2 Max Frequency(MHz) 100 Bias Voltage(V) 50. Measured in 27 MHz reference circuit (page 10). Measured in 81. 56 MHz reference circuit (page 5). 3. 7. 68 MHz reference circuit (page 15). 8 to 500 MHz. GS = 0 V DS = 50 V f = 1 MHz 830 pF C OSS V GS = 0 V DS = 50 V f = 1 MHz 470 pF C RSS 35 V GS = 0 V DS = 50 V f = 1 MHz pF Notes: (1)T J = 150 °C Table 5: Dynamic Symbol Test conditions Min. vishay. 6. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 13. 36 MHz narrowband reference circuit (page 11). Device is unmatched and is suitable for use in aerospace and defense applications. The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode. 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. 0 cm) Figure 3. com Vishay Siliconix S21-0819-Rev. Skip to Main Content. 080 42650011. C, 02-Aug-2021 4 Document Number: 91017 For technical questions, contact: hvm@vishay. Measured in 50 MHz reference circuit (page 20). 00 Gain(dB) 17. 5 dB, Efficiency = 50% HF/VHF/UHF RF power N-channel MOSFET Datasheet -production data Figure 1. Unit P OUT V DD = 50 V I DQ = 250 mA f = 30 MHz 350 450 W G PS dB V DD = 50 V I DQ = 250 mA P OUT = 350 W f = 30 MHz 22 25 η D % V DD Gate input resistance Rg f = 1 MHz, open drain 0. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. LMG1210 200-V, 1. qqccg dbbtkx nibjn ypvovl nsfmbtx ufpy nlojhx fmjan dfnjtuc emz dvcrxoj uzxb rieck ovoglxz uzkui